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A problem with smartphones and even tablets is that despite all the wonderous abilities, the battery life leaves something to be desired. Larger battery packs are a way around that, but in the race for the slimmest device, there are limits as to how large a battery can be before being too obtrusive. Luckily, Toshiba may have a solution to those woes, and it isn't a battery pack. Rather, Toshiba has created a low-power, high-speed version of MRAM capable of cutting power consumption in mobile processors by 66%. This new MRAM (magnetoresistive random access memory) can replace the SRAM used as cache memory, with the same or larger amounts consuming far less power. Toshiba uses spin-torque technology to lower the charge needed for memory writes. Spin-torque technology uses the spin of electrons to set the orientation of the magnetic bits, with the memory chips using elements smaller than 30nm.
Toshiba has focused on decreasing power consumption and increasing speed with this new MRAM, so a smaller amount is more beneficial than a large amount of SRAM in a cache. The company is working with several others to increase the storage capacity to serve as a possible replacement for DRAM and even flash memory, but it may when the next-generation memory arrives that we see that alternative. As for the MRAM memory-cache, well, there isn't a timeframe for its use in the market, but hopefully Toshiba has word on that soon.
Toshiba has announced the development of a new type of cache memory that promises to cut mobile processor power consumption by as much as two-thirds.
Today's mobile processors rely on high-speed static random-access memory (SRAM) to function. The problem with SRAM is it will only retain data when power is applied. That data also has to be refreshed regularly (many times a second), meaning it is a constant drain on a battery like HP 0950-3988 Ac Adapter, HP 177626-001 Ac Adapter, HP ACC10H Ac Adapter, HP Pavilion ZT4000 Ac Adapter, HP DC359A Ac Adapter, HP Pavilion ZE2200 Ac Adapter, HP PPP012H Ac Adapter, HP Omnibook 2100 Ac Adapter, HP OmniBook 2120 Ac Adapter, HP Omnibook 3000 Ac Adapter, HP Omnibook 4100 Ac Adapter, HP Pavilion ZE2000 Ac Adapter. And as chip performance has increased, so has the power required for SRAM and the leakage that occurs, meaning an alternative is highly desirable.
Toshiba has developed STT-MRAM to solve the problem. MRAM is non-volatile memory, meaning it retains data without power and only requires power for operations on that data. This means that it has the potential to draw no power at all depending on what a device is doing. However, the problem with MRAM until now has been it used more power than SRAM and was significantly slower.
What Toshiba has managed to do is lower the power consumption of STT-MRAM by 90 percent over what is typical, while at the same time speeding up its operation. The end result is cache memory that performs as well as SRAM, but only requires around a third of the power. That will be seen as a net gain in battery life for any processor and subsequent device incorporating it.
Currently Toshiba has only proved the performance potential of STT-MRAM using a "highly accurate processor simulator." However, the company is confident STT-MRAM will be integrated into mobile processors and used in both tablets and smartphones in the future.
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